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Quantum Nano Collision Seminar Series: Professor Jonathan Baugh
Single-electron devices and their applications in quantum information.

This talk will focus on quantum nanoelectronic devices, built on the versatile platform of the two-dimensional electron gas (2DEG), and some of their applications. Ultra-high mobility AlGaAs/GaAs heterostructures typically contain dopant layers to provide carriers, however, a 2DEG can be electrostatically induced by a top gate in an undoped structure. Dopant-free devices are more challenging to fabricate, but have superior reproducibility and lower disorder. Moreover, they can be ambipolar: both hole (P type) and electron (N type) gases can be induced [1]. We demonstrate the diode behaviour of a lateral PN junction and characterize the electroluminescence that occurs under a sufficient PN bias voltage. We also demonstrate the first one-parameter single-electron pump (dynamic quantum dot) in undoped GaAs [2], and discuss how it can be used in metrology (defining the Ampere) or be combined with a PN junction to realize a novel on-demand source of single photons. Next, we focus on electron spin qubits in silicon MOS quantum dots, and the prospects for building a large-scale processor. We propose a node/network architecture for implementing surface code quantum error correction. The scheme splits the scalability problem in two parts: inter-node entanglement distribution and intra-node operations [3]. This approach relaxes constraints on wiring densities and allows the co-integration of readout and multiplexing circuits. I will discuss our experimental efforts to simplify the design of Si MOS quantum dots to improve prospects for scalability [4].

May 18, 2022 04:00 PM in Eastern Time (US and Canada)

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